Product Summary

The MG75Q1JS43 is a TOSHIBA GTR module which is silicon N channel IGBT.

Parametrics

MG75Q1JS43 absolute maximum ratings: (1)collector-emitter voltage: 1200 V; (2)gate-emitter voltage: ±20 V; (3)collector current: 75 A; (4)forward current: 75 A; (5)collector power dissipation: 560 W; (6)junction temperature: 150 ℃; (7)storage temperature range: -40 to 125 ℃; (8)isolation voltage: 2500 V; (9)screw torque: 3/3 Nm.

Features

MG75Q1JS43 features: (1)high input impedance; (2)high speed: tf=0.5μs Max, trr=0.5μs Max; (3)low saturation voltage: VCE(sat)=4.0 Max; (4)enhancement-mode; (5)the electrodes are isolated from case.

Diagrams

MG750-1.00K-1%
MG750-1.00K-1%
Caddock Electronics Inc
RES 1K 1% HIGH VOLT AXIAl 7.5
Data Sheet
1-100: $7.91
MG750-10.0M-1%
MG750-10.0M-1%
Caddock
Thick Film Resistors - Through Hole 10M ohm 1%
Data Sheet
0-1: $23.15
MG750-20M-1%
MG750-20M-1%
Caddock
Thick Film Resistors - Through Hole
Data Sheet
0-34: $23.15
34-50: $21.37
50-100: $15.43
100-200: $13.89
MG750-402K-1%
MG750-402K-1%
Caddock Electronics Inc
RES 402K 1% HIGH VOLT AXIAL 7.5
Data Sheet
1-10: $15.81
MG750-5.00K-1%
MG750-5.00K-1%
Caddock
Thick Film Resistors - Through Hole 5K ohm 1%
Data Sheet
0-1: $22.40
MG75P
MG75P
Other

Data Sheet
Negotiable