(China (Mainland))
Product Summary
The BSM10GD120DN2 is a 1200V IGBT power module.
Parametrics
BSM10GD120DN2 aboslute maximum ratings:(1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:15A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:20A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:80W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.
Features
BSM10GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM10GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 10A FL BRIDGE |
Data Sheet |
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BSM10GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 15A |
Data Sheet |
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