Product Summary

The BSM15GD120DN2 is a 1200V IGBT power module.

Parametrics

BSM15GD120DN2 aboslute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:25A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:50A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:145W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.

Features

BSM15GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM15GD120DN2
BSM15GD120DN2

Infineon Technologies

IGBT Modules 1200V 15A 3-PHASE

Data Sheet

0-1: $28.79
1-10: $25.91
BSM15GD120DN2E3224
BSM15GD120DN2E3224

Infineon Technologies

IGBT Modules N-CH 1.2KV 25A

Data Sheet

0-1: $28.79
1-10: $25.91