(China (Mainland))
Product Summary
The BSM300GA170DN2 is a 170V IGBT power module.
Parametrics
BSM300GA170DN2 absolute maximum ratings: (1)Collector-emitter voltage:1700 V; (2)Collector-gate voltage RGE = 20 kΩ:1700V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:440A, TC = 80℃:300A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:880A,TC = 80℃:600A; (6)Power dissipation per IGBT TC = 25℃:2500W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-55℃ to + 125℃.
Features
BSM300GA170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Enlarged diode area; (4)Package with insulated metal base plate; (5)RG on,min = 5.6 Ohm.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM300GA170DN2 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 440A |
Data Sheet |
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BSM300GA170DN2 E3166 |
Other |
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Data Sheet |
Negotiable |
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BSM300GA170DN2S |
Infineon Technologies |
IGBT Modules 1700V 300A SINGLE |
Data Sheet |
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BSM300GA170DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1700V 300A |
Data Sheet |
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BSM300GA170DN2_E3166 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 440A |
Data Sheet |
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