Product Summary
The MG150J2YS45 is a N channel IGBT. The applications of it include high power switching and motor control.
Parametrics
MG150J2YS45 absolute maximum ratings: (1)collector-emitter voltage:600V; (2)gate-emitter voltage:±20V; (3)collector current:IC:150A, ICP:300A; (4)forward current:IF:150A, IFM:300A; (5)collector power dissipation:780W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.
Features
MG150J2YS45 features: (1)The electrodes are isolated from case ; (2)High input impedance ; (3)Includes a complete half bridge in one package ; (4)Enhancement-mode ; (5)High speed : tf = 0.30μs (Max) (IC = 150A), trr = 0.15μs (Max) (IF = 150A) ; (6)Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A) .
Diagrams
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MG150Q1JS44 |
Other |
Data Sheet |
Negotiable |
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