(China (Mainland))
Product Summary
The MG150Q2YS40 is a N channel IGBT. The applications of it include high power switching and motor control.
Parametrics
MG150Q2YS40 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current:IC:150A, ICP:300A; (4)forward current:IF:150A, IFM:300A; (5)collector power dissipation:1100W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.
Features
MG150Q2YS40 features: (1)high input impedance; (2)high speed:tf=0.5us(max.) , trr=0.5us(max.); (3)low saturation voltage: VCE(sat)=4.0V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.
Diagrams
 |
 MG15G1AM1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG15C4MNI |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1588C |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1588A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG150Q2YS65H |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG150Q1JS65HA |
Other |
|
Data Sheet |
Negotiable |
|
||||
