Product Summary

The MG150Q2YS51 is a N channel IGBT. The applications of it include high power switching and motor control.

Parametrics

MG150Q2YS51 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current:IC:200/150A, ICP:400/300A; (4)forward current:IF:150A, IFM:300A; (5)collector power dissipation:1250W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.

Features

MG150Q2YS51 features: (1)high input impedance; (2)high speed:tf=0.3us(max.) @inductive load; (3)low saturation voltage: VCE(sat)=3.6V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.

Diagrams

MG150J1JS50
MG150J1JS50

Other


Data Sheet

Negotiable 
MG150J1ZS50
MG150J1ZS50

Other


Data Sheet

Negotiable 
MG150J7KS50
MG150J7KS50

Other


Data Sheet

Negotiable 
MG150J7KS61
MG150J7KS61


IGBT MOD CMPCT 600V 150A

Data Sheet

Negotiable 
MG150Q1JS43
MG150Q1JS43

Other


Data Sheet

Negotiable 
MG150Q1JS44
MG150Q1JS44

Other


Data Sheet

Negotiable