(China (Mainland))
Product Summary
The MG200Q1US51 is a silicon N channel IGBT. The applicatios of the device include high power switching applications and motor control applications.
Parametrics
MG200Q1US51 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 300/200A when 25℃/80℃; 1ms, ICP: 600/400A when 25℃/80℃; (4)forward current, DC, IF: 200A; 1ms, IFM: 400A; (5)collector power dissipation, PC: 1500W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40 to 125℃; (8)isolation voltage, Visol: 2500V (AC 1minute); (9)screw torque: 2Nm.
Features
MG200Q1US51 features: (1)high input impedance; (2)high speed: tf=0.3μs max @ inductive load; (3)low saturation voltage: VCE(sat)=3.6V max; (4)enhancement-mode; (5)the electrodes are isolated from case.
Diagrams
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MG2001 |
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MG2002 |
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MG2004 |
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MG200J6ES60 |
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MG200J6ES61 |
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IGBT MOD CMPCT 600V 200A |
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