(China (Mainland))
Product Summary
The MG400J1US1 is a silicion N channel IGBT. The device is suitable for high power switching applications and motor control applications.
Parametrics
MG400J1US1 absolute maximum ratings: (1)collector-emitter voltage, VCES: 600V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 400A; 1ms, ICP: 800A; (4)froward current, DC, IF: 400A; 1ms, IFM: 800A; (5)collector power dissipation, PC: 1500W when TC=25℃; (6)junction temperature, Tj: 150℃; (7)storage temepratgure range, Tstg: -40 to 125℃; (8)isolation voltage, VIsol: 2500V; (9)screw torque (terminal/M4/M6/mounting): 2/3/3Nm.
Features
MG400J1US1 features: (1)the electrodes are isolated from case; (2)high input impedance; (3)includes a comlete half bridge in one package; (4)enhancement mode; (5)high speed; (6)low saturation voltage.
Diagrams
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MG400Q2YS60A |
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