Product Summary

The BSM75GD120DN2 is a IGBT Power Module.

Parametrics

BSM75GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage: RGE = 20 kΩ; (3)VCGR: 1200V; (4)Gate-emitter voltage VGE: ± 20V; (5)DC collector current, IC; (6)TC = 25 ℃: 103A; (7)TC = 80 ℃: 75A; (8)Pulsed collector current, tp = 1 ms, ICpuls; (9)TC = 25 ℃, 206A; (10)TC = 80 ℃, 150A; (11)Power dissipation per IGBT, Ptot, TC = 25 ℃: 520W; (12)Chip temperature Tj: + 150 ℃; (13)Storage temperature Tstg: -55 to + 150℃; (14)Thermal resistance, chip case RthJC ≤0.235 K/W; (15)Diode thermal resistance, chip case RthJCD ≤ 0.55 K/W; (16)Insulation test voltage, t = 1min. Vis: 2500 Vac; (17)Creepage distance: 16 mm; (18)Clearance: 11mm; (19)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56.

Features

BSM75GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM75GD120DN2 Circuit Diagram

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